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Digipart offer a vast selection of electronic components. description advanced hexfet® power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- irfz44n datasheet pdf resistance per silicon area. n- channel enhancement mode standard level field- effect power transistor in a plastic envelope using ’ trench’ technology. high- quality and fast shipping the datasheet provides product summary, ordering information, absolute maximum ratings, thermal resistance, specifications and more. the device featuresverylowon- stateresistance and has integral zener diodes giving esd protection up to 2kv. irfz44npbf product data sheet advanced process technology ultra low on- resistance dynamic dv/ dt rating 175° c operating temperature fast switching fully avalanche rated lead- free description advanced hexfet® power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. manufacturer: nxp semiconductors. download the pdf datasheet for irfz44, a third generation power mosfet from vishay with fast switching, ruggedized design, low on- resistance and cost- effectiveness. file size: 64kbytes. irfz44n pdf n- channel enhancement- mode mosfet ratings and characteristic curves fig.
1 - output characteristics i d — drain- tosource current ( a) vds — drain- to- source voltage ( v) id — drain current ( a) fig. it is intended for use in switched mode power supplies and general purpose switching applications. 3 - on resistance vs. description: n- channel enhancement mode trenchmos transistor. drain currentvds — drain- to- source voltage ( v). order quality irfz44n and other parts from authorized suppliers.
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